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| Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R12KE3 Vorlaufig Preliminary Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage Durchlastrom Grenzeffektivwert pro Chip RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output T vj =25C T C =80C T C =80C tP = 10 ms, T vj = tP = 10 ms, T vj = 25C 25C VRRM IFRMSM IRMSmax IFSM I2t 1600 25 36 196 158 192 125 V A A A A A2s A2s www..com Stostrom Grenzwert surge forward current Grenzlastintegral tP = 10 ms, T vj = 150C tP = 10 ms, T vj = 150C I2t - value Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I2t - value T vj =25C T C = 80C T C = 25 C tP = 1 ms, T C = 25C T C =80C VCES IC,nom. IC ICRM Ptot VGES 1200 10 15 20 55 +/- 20V V A A A W V IF tP = 1 ms VR = 0V, tp = 10ms, T vj = 125C IFRM I2t 10 20 20 A A A2s Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current prepared by: Thomas Passe approved by: Ingo Graf tP = 1 ms IF IFRM 10 20 A A T vj =25C T C = 80 C T C = 25 C tP = 1 ms, T C = 80C T C = 25C VCES IC,nom. IC ICRM Ptot VGES 1200 10 15 20 55 +/- 20V V A A A W V date of publication: 2002-02-14 revision: 6 1(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R12KE3 Vorlaufig Preliminary RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage T vj = 150C, T vj = 150C T vj = 150C T vj = 150C, T C = 25C VR = 1600 V IF = 10 A VF V(TO) rT IR RAA'+CC' min. - typ. 0,95 0,78 17 5 11 max. V V mW mA mW www..com Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data VCE = VGE, T vj = 25C, min. IC = IC = IC = 10 A 10 A 0,3mA VGE(TO) Cies ICES IGES 600 V 100 Ohm 100 Ohm 600 V 100 Ohm 100 Ohm 600 V 100 Ohm 100 Ohm 600 V 100 Ohm 100 Ohm 600 V 100 Ohm 80 nH 600 V 100 Ohm 80 nH 100 Ohm 720 V ISC Eoff Eon tf td,off tr td,on VCE sat 4,5 - typ. 1,9 2,3 5,5 0,6 5,0 - max. 2,45 6,5 400 V V V nF mA nA f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj =125C, VCE = 1200V VCE = 0V, VGE =20V, Tvj =25C IC = INenn, VCC = VGE = 15V, T vj = 25C, RG = VGE = 15V, T vj = 125C, RG = IC = INenn, VCC = VGE = 15V, T vj = 25C, RG = VGE = 15V, T vj = 125C, RG = IC = INenn, VCC = VGE = 15V, T vj = 25C, RG = VGE = 15V, T vj = 125C, RG = IC = INenn, VCC = VGE = 15V, T vj = 25C, RG = VGE = 15V, T vj = 125C, RG = IC = INenn, VCC = LS = IC = INenn, VCC = LS = tP 10s, VGE 15V, T vj125C, RG = VCC = VGE = 15V, T vj = 125C, RG = VGE = 15V, T vj = 125C, RG = 52 50 20 30 292 391 65 90 1,42 - ns ns ns ns ns ns ns ns mWs 1,22 - mWs 40 - A 2(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R12KE3 Vorlaufig Preliminary Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaspannung www..com voltage forward Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy LsCE T C = 25C RCC'+EE' - typ. 14 max. 40 nH mW min. VGE = 0V, Tvj = 25C, VGE = 0V, Tvj = 125C, IF=INenn, IF = IF = 10 A 10 A 550 A/us 600 V 600 V 550 A/us 600 V 600 V 550 A/us 600 V 600 V Erec Qr IRM VF - typ. 1,7 1,7 14 15 1 1,8 0,26 0,56 max. 2,1 V V A A As As mWs mWs - diF/dt = VGE = -10V, Tvj = 25C, VR = VGE = -10V, Tvj = 125C, VR = IF=INenn, - diF/dt = VGE = -10V, Tvj = 25C, VR = VGE = -10V, Tvj = 125C, VR = IF=INenn, - diF/dt = VGE = -10V, Tvj = 25C, VR = VGE = -10V, Tvj = 125C, VR = Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current VCE = VGE, T vj = 25C, min. IC = IC = IC = 10,0 A 10,0 A 0,3mA VGE(TO) Cies VCE sat 4,5 - typ. 1,9 2,3 5,5 0,6 5,0 max. 2,45 6,5 V V V nF mA f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj = 125C, VCE = 1200V VCE = 0V, VGE = 20V, Tvj = 25C IGES - - 400 nA Diode Brems-Chopper/ Diode Brake-Chopper T vj = 25C, Durchlaspannung forward voltage T vj = 125C, min. IF = IF = 10,0 A 10,0 A VF - typ. 1,8 1,85 max. 2,3 V V NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value min. T C = 25C T C = 100C, R100 = 493 W T C = 25C R2 = R1 exp [B(1/T2 - 1/T 1)] R25 DR/R P25 B25/50 -5 typ. 5 max. 5 20 kW % mW K 3375 3(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R12KE3 Vorlaufig Preliminary Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to heatsink Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Innerer www..com Warmewiderstand thermal resistance, junction to case Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Ubergangs-Warmewiderstand thermal resistance, case to heatsink Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature T vj T op T stg lPaste=1W/m*K lgrease=1W/m*K RthCH RthJC lPaste=1W/m*K lgrease=1W/m*K RthJH -40 -40 typ. 1,9 2,6 3,7 2,6 4,0 0,2 0,6 1,3 0,6 1,4 - max. 1,9 2,2 2,7 2,2 2,9 150 125 125 K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W C C C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation CTI comperative tracking index Anprekraft f. mech. Befestigung pro Feder mounting force per clamp Gewicht weight Kontakt - Kuhlkorper terminal to heatsink Kriechstrecke creeping distance Luftstrecke clearance Terminal - Terminal terminal to terminal Kriechstrecke creeping distance Luftstrecke clearance F Al2O3 225 40...80 36 13,5 12 7,5 7,5 N G g mm mm mm mm 4(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R12KE3 Vorlaufig Preliminary IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 20 18 16 14 Tj = 25C Tj = 125C www..com 12 10 8 6 4 2 0 0,00 IC [A] 0,50 1,00 1,50 2,00 2,50 3,00 3,50 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 20 18 16 14 12 9V 11V 13V 15V 17V 10 8 6 4 2 0 0,00 19V IC = f (VCE) Tvj = 125C IC [A] 0,50 1,00 1,50 2,00 2,50 3,00 3,50 VCE [V] 5(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R12KE3 Vorlaufig Preliminary IC = f (VGE) VCE = 20 V Ubertragungscharakteristik Wechselr. (typisch) Transfer characteristic Inverter (typical) 20 18 16 14 Tj = 25C Tj = 125C www..com 12 10 8 6 4 2 0 6 7 8 9 10 11 12 IC [A] VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) 20 18 16 14 12 Tj = 25C Tj = 125C IF = f (VF) IF [A] 10 8 6 4 2 0 0 0,5 1 1,5 2 2,5 3 VF [V] 6(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R12KE3 Vorlaufig Preliminary E = f (IC), Eoff = f (IC), Erec = f (IC) VCC = on Tj = 125C, VGE = 15 V, RGon = RGoff = 600 V 100 Ohm Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 5 4,5 4 3,5 Eon Eoff Erec E [mWs] www..com 3 2,5 2 1,5 1 0,5 0 0 5 10 15 20 25 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 3 Eon 2,5 Eoff Erec 2 E = f (RG), Eoff = f (RG), Erec = f (RG) on Tj = 125C, VGE = +-15 V , Ic = Inenn , VCC = 600 V E [mWs] 1,5 1 0,5 0 100 120 140 160 180 200 220 RG [W] 7(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R12KE3 Vorlaufig Preliminary ZthJH = f (t) Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter 10,000 Zth-IGBT Zth-FWD www..com 1,000 ZthJH [K/W] i 1 IGBT: ri [K/W]: 169,8e-3 2 850,1e-3 78,7e-3 1,22 80,4e-3 3 667,8e-3 10,1e-3 956,8e-3 10,35e-3 1 4 912,3e-3 225,6e-3 1,27 227,3e-3 10 ti [s]: 3e-6 FWD: r i [K/W]: 245,4e-3 ti [s]: 0,100 0,001 0,01 3e-6 0,1 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) 25 IC = f (VCE) 100 Ohm Reverse bias save operating area Inverter (RBSOA) Tvj = 125C, VGE = 15V, RG = IC,Chip 20 15 IC [A] 10 5 0 0 200 400 600 800 1000 1200 1400 VCE [V] 8(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R12KE3 Vorlaufig Preliminary IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) Output characteristic brake-chopper-IGBT (typical) 20 18 16 14 Tj = 25C Tj = 125C www..com 12 10 8 6 4 2 0 0,00 IC [A] 0,50 1,00 1,50 2,00 2,50 3,00 3,50 VCE [V] Durchlakennlinie der Brems-Chopper-Diode (typisch) IF = f (VF) Forward characteristic of brake-chopper-FWD (typical) 20 18 16 14 12 Tj = 25C Tj = 125C IF [A] 10 8 6 4 2 0 0 0,5 1 1,5 2 2,5 3 3,5 VF [V] 9(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R12KE3 Vorlaufig Preliminary IF = f (VF) Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) 20 18 16 14 Tj = 25C Tj = 150C www..com 12 10 8 6 4 2 0 0 0,2 0,4 0,6 0,8 1 1,2 IF [A] VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp 10000 R[W] 1000 100 0 20 40 60 80 100 120 140 TC [C] 10(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R12KE3 Vorlaufig Preliminary Schaltplan/ Circuit diagram J www..com Gehauseabmessungen/ Package outlines Bohrplan / drilling layout 11(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R12KE3 Gehauseabmessungen Forts. / Package outlines contd. www..com Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Diese gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 12(12) |
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